Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers-Reference-Cited by-同舟云学术

Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers

Published:1999 Issue:23 Volume:35 Page:2034
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Wilson L.R.,Keightley P.T.,Cockburn J.W.,Skolnick M.S.,Clark J.C.,Hill G.,Grey R.,Hopkinson M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19991380?crawler=true&mimetype=application/pdf

Reference5 articles.

1. Quantum cascade laser: Temperature dependence of the performance characteristics and highT0operation

2. GaAs/AlxGa1−xAs quantum cascade lasers

3. GaAs/AlGaAs-based microcylinder lasers emitting at 10 μm

4. High-power λ≈8 μm quantum cascade lasers with near optimum performance

5. High power mid‐infrared (λ∼5 μm) quantum cascade lasers operating above room temperature

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1. Mid-infrared Quantum Cascade Lasers;Mid-infrared Semiconductor Optoelectronics;2006

2. GaAs-AlGaAs quantum cascade lasers: physics, technology, and prospects;IEEE Journal of Quantum Electronics;2002-06

3. Key issues for mid–infrared emission;Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences;2001-03-15

4. Strain-compensated quantum cascade lasers operating at room temperature;Journal of Crystal Growth;2000-12

5. Improved temperature performance of Al0.33Ga0.67As/GaAs quantum-cascade lasers with emission wavelength at λ≈11 μm;Applied Physics Letters;2000-06-05