Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT-Reference-Cited by-同舟云学术

Comparative study of electro‐thermal characteristics of 4500 V diffusion‐CS IGBT and buried‐CS IGBT

Published:2021-02-15 Issue:3 Volume:15 Page:251-259
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Jin Rui¹,Wang Yaohua¹,Li Li¹,Xu Longlai²^ORCID,Pu Kui²,Zeng Jun³,Darwish Mohamed³

Affiliation:

1. State Key Laboratory of Advanced Power Transmission Technology Global Energy Interconnection Research Institute Company Limited Beijing China

2. MaxPower Semiconductor Inc. Chengdu China

3. MaxPower Semiconductor Inc. San Jose California USA

Funder

State Grid Corporation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cds2.12022

Reference14 articles.

1. Takahashi H. et al.:Carrier stored trench‐gate bipolar transistor (CSTBT)‐a novel power device for high voltage application. In:8th International Symposium on Power Semiconductor Devices and ICs Proceedings pp.349–352(1996)

2. Li P. Kong M. Chen X.A novel diode‐clamped CSTBT with ultra‐low on‐state voltage and saturation current. In:2016 28th International Symposium on Power Semiconductor Devices and ICs Proceedings pp.307‐310(2016)

3. Kitagawa M. et al.:4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor. In:Proceedings of IEEE International Electron Devices Meeting pp.679–682(1993)

4. Matsushita K. et al.:Low gate capacitance IEGT with trench shield emitter (IEGT‐TSE) realizing high frequency operation. In:2013 25th International Symposium on Power Semiconductor Devices and ICs Proceedings pp.269‐272(2013)

5. Ninomiya H. et al.:4500V trench IEGTs having superior turn‐on switching characteristics. In:12th International Symposium on Power Semiconductor Devices and IC's Proceedings pp.221‐224(2000)

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