Velocity/field characteristic of n-type indium phosphide at 110 and 330 K-Reference-Cited by-同舟云学术

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Velocity/field characteristic of n-type indium phosphide at 110 and 330 K

Published:1975 Issue:5 Volume:11 Page:96
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tebbenham R.L.,Walsh D.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19750073?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Glover, G.H.: Microwave measurements of the velocity-field characteristic ofn-type indium phosphide,

2. Data from the Allen Clark Research Centre, The Plessey Co. Ltd.

3. Marcuvitz, N.: The waveguide handbook, (McGraw-Hill 1951)

4. Whittaker, E.T., and Watson, G.N.: A course of modern analysis, (CUP 1945), p. 229 et seq.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detailed transport modelling of experimental behaviour of lightly plasma-damaged epitaxial InP;International Journal of Electronics;1995-11

2. Growth of ultrapure InP by atmospheric pressure organometallic vapor phase epitaxy;Applied Physics Letters;1986-10-13

3. Electron transport in InP at high electric fields;Applied Physics Letters;1983-04-15

4. X-ray investigation of crystal defects in Czochralski grown InP single crystals;Journal of Crystal Growth;1983-04

5. Molecular‐beam epitaxial growth of InP homoepitaxial layers and their electrical and optical properties;Journal of Applied Physics;1981-04

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