Impact of subchannel design on DC and RF performance of 0.1 [micro sign]m MODFETs with InAs-inserted channel
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19981231?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Improved InAlAs/InGaAs HEMT characteristics by inserting an InAs layer into the InGaAs channel
2. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
3. 0.10 /spl mu/m graded InGaAs channel InP HEMT with 305 GHz f/sub T/ and 340 GHz f/sub max/
4. Al/sub 0.25/In/sub 0.75/P/Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.35/In/sub /0/sub .65/As graded channel pseudomorphic HEMT's with high channel-breakdown voltage
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors;IEICE Electronics Express;2004
2. Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors;IEICE Electronics Express;2004
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