Bend loss attenuator by carrier injection in InGaAsP∕InP-Reference-Cited by-同舟云学术

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Bend loss attenuator by carrier injection in InGaAsP∕InP

Published:2005 Issue:24 Volume:41 Page:1348
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Ng S.,Abdalla S.,Barrios P.,Dela^ge A.,Janz S.,McKinnon R.,Syrett B.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20053357?crawler=true&mimetype=application/pdf

Reference12 articles.

1. ‘Cisco ONS 15540 ESPx Planning Guide’, 2004), p. 5–4 Chap. 5

2. A novel processing technique to fabricate planar InGaAsP/InP electroabsorption waveguide modulators

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAs based long-wavelength microring resonator optical switches utilising bias assisted carrier-injection induced refractive index change;Optics Express;2012-06-26

2. Performance Optimization of a Reconfigurable Waveguide Digital Optical Switch on InGaAsP–InP: Design, Material, and Carrier Dynamics;IEEE Journal of Quantum Electronics;2007-12

3. Compact variable optical attenuator based on the W type waveguide;Optoelectronic Devices and Integration II;2007-11-29

4. Performance Optimization of a Reconfigurable Waveguide Digital Optical Switch on InGaAsP/InP;2006 IEEE LEOS Annual Meeting Conference Proceedings;2006-10

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