Ultra-broadband 20.5–31 GHz monolithically-integrated CMOS power amplifier
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20053261?crawler=true&mimetype=application/pdf
Reference5 articles.
1. 60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz
2. A 24GHz, +14.5dBm fully-integrated power amplifier in 0.18 μm CMOS
3. Fully-integrated 32 dBm, 1.5–2.9 GHz SiGe-bipolar power amplifier using power-combining transformer
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