High performances of InP channel power HEMT at 94 GHz
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20053068?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Very high power-added efficiency and low-noise 0.15- mu m gate-length pseudomorphic HEMTs
2. An InP MISFET with a power density of 1.8 W/mm at 30 GHz
3. A 1.45-W/mm, 30-GHz InP-channel power HEMT
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation on Effect of Doped InP Subchannel Thickness and Delta-Doped InP Layer of Composite Channel HEMT;IEEE Transactions on Electron Devices;2022-03
2. Investigation of New Multi-Channel HEMT Based on InAs0.3P0.7/InP for Future Power Terahertz HEMT’s;International Journal of Nanoscience;2020-12-10
3. Nonlinear modeling of InP devices for W-band applications;International Journal of Microwave and Wireless Technologies;2009-03-19
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