8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs-Reference-Cited by-同舟云学术

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8.2 GHz bandwidth monolithic integrated optoelectronic receiver using MSM photodiode and 0.5 μm recessed-gate AlGaAs/GaAs HEMTs

Published:1991 Issue:9 Volume:27 Page:734
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Hurm V.,Rosenzweig J.,Ludwig M.,Benz W.,Berroth M.,Huelsmann A.,Kaufel G.,Koehler K.,Raynor B.,Schneide J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19910456?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Etching of GaAs on AlGaAs in Rie-Mode

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2. Fully embedded board-level guided-wave optoelectronic interconnects;Proceedings of the IEEE;2000-06

3. Bandwidth enhancement of transimpedance amplifier by a capacitive-peaking design;IEEE Journal of Solid-State Circuits;1999

4. High Speed Receiver Circuit Designs for Fiber Optic Communications;IETE Journal of Education;1997-07

5. Effect of deposition temperature on electric conduction and microstructure of Au films;Solid-State Electronics;1996-12

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