1.3 μm InGaAsP ridge waveguide laser on GaAs and silicon substrates by thin-film transfer

Author:

Shieh C.L.,Chi J.Y.,Armiento C.A.,Haugsiaa P.O.,Negri A.,Wang W.I.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference4 articles.

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Wafer-Level Heterogeneous Integration for MOEMS, MEMS, and NEMS;IEEE Journal of Selected Topics in Quantum Electronics;2011-05

2. Heterogeneous Integration of Compound Semiconductors;Annual Review of Materials Research;2010-06-01

3. Wafer bonding and epitaxial transfer of GaSb-based epitaxy to GaAs for monolithic interconnection of thermophotovoltaic devices;Journal of Electronic Materials;2004-03

4. Wafer bonding technology for optoelectronic integrated devices;Solid-State Electronics;1999-08

5. Article;Le Journal de Physique IV;1999-02

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