Data transmission using GaAs-based InAs-InGaAs quantum dot LEDs emitting at 1.3 lm wavelength
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020646?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Low-threshold oxide-confined 1.3-μm quantum-dot laser
2. 1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
3. 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
4. Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
5. High-efficiency light-emitting diodes at /spl ap/1.3 /spl mu/m using InAs-InGaAs quantum dots
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