Wear-out and breakdown of ultra-thin gate oxides after irradiation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20020757?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Ionizing radiation induced leakage current on ultra-thin gate oxides
2. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
3. From Radiation Induced Leakage Current to Soft Breakdown in Irradiated MOS Devices With Ultrathin Gate Oxide
4. Noise characteristics of radiation-induced soft breakdown current in ultrathin gate oxides
5. Precursor ion damage and angular dependence of single event gate rupture in thin oxides
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1. Electric-induced oxide breakdown of a charge-coupled device under femtosecond laser irradiation;Applied Optics;2013-10-25
2. Impact of Radiation on the Operation and Reliability of Deep Submicron CMOS Technologies;ECS Transactions;2010-11-23
3. Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown;IEEE Transactions on Nuclear Science;2009-08
4. High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects;IEEE Transactions on Nuclear Science;2008-12
5. Radiation Tolerance of Nanocrystal-Based Flash Memory Arrays Against Heavy Ion Irradiation;IEEE Transactions on Nuclear Science;2007-12
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