Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer-Reference-Cited by-同舟云学术

Dramatic reduction of gate leakage current in 1.61 nm HfO2 high-k dielectric poly-silicon gate with Al2O3 capping layer

Published:2002 Issue:20 Volume:38 Page:1223
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Yang Chih-Wei,Fang Yean-Kuan,Chen Chien-Hao,Wang Wen-De,Lin Tin-Yu,Wang Ming-Fang,Hou Tuo-Hung,Cheng Juing-Yi,Yao Liang-Gi,Chen Shyh-Chang,Yu Chen-Hua,Liang Mong-Song

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20020847?crawler=true&mimetype=application/pdf

Reference6 articles.

1. ‘International Technology Roadmap for Semiconductors’, 1999

2. Thermodynamic stability of binary oxides in contact with silicon

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