SiC MOSFET switching – Lower losses without increased EMI – A technique to evaluate and achieve this goal-Reference-Cited by-同舟云学术

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SiC MOSFET switching – Lower losses without increased EMI – A technique to evaluate and achieve this goal

Published:2021-10-22 Issue:1 Volume:2022 Page:76-85
ISSN:2051-3305
Container-title:The Journal of Engineering
language:en
Short-container-title:The Journal of Engineering

Author:

Maier Robert W.¹^ORCID,Bakran Mark‐M.¹^ORCID

Affiliation:

1. Department of Mechatronics Center of Energy Technology (ZET) University of Bayreuth Bayreuth Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

Institution of Engineering and Technology (IET)

Subject

General Engineering,Energy Engineering and Power Technology,Software

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/tje2.12099

Reference19 articles.

1. Electromagnetic Compatibility Engineering

2. Grundkurs Leistungselektronik

3. A review on switching slew rate control for silicon carbide devices using active gate drivers;Zhao S.;IEEE J. Emerg. Sel. Top. Power Electron.,2020

4. Modeling-based examination of conducted EMI emissions from hard- and soft-switching PWM inverters

5. Power Converter EMI Analysis Including IGBT Nonlinear Switching Transient Model

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