490 fs pulse generation from passively mode‐locked single section quantum dot laser directly grown on on‐axis GaP/Si-Reference-Cited by-同舟云学术

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490 fs pulse generation from passively mode‐locked single section quantum dot laser directly grown on on‐axis GaP/Si

Published:2018-04 Issue:7 Volume:54 Page:432-433
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Liu S.¹,Jung D.²,Norman J. C.³,Kennedy M. J.¹,Gossard A. C.¹,Bowers J. E.¹

Affiliation:

1. Department of Electrical and Computer EngineeringUniversity of CaliforniaSanta BarbaraCalifornia93106USA

2. Institute for Energy Efficiency, University of CaliforniaSanta BarbaraCalifornia93106USA

3. Materials DepartmentUniversity of CaliforniaSanta BarbaraCalifornia93106USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.4639

Reference10 articles.

1. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers

2. High‐power picosecond and femtosecond pulse generation from a two‐section mode‐locked quantum‐dot laser;Rafailov E.U.;Appl. Phys. Lett.,2005

3. InGaAs Quantum-Dot Mode-Locked Laser Diodes

4. Passively mode‐locked InAs quantum dot lasers on a silicon substrate by Pd‐GaAs wafer bonding;Wang Z.;Appl. Phys. Lett.,2017

5. 312‐fs pulse generation from a passive C‐band InAs/InP quantum dot mode‐locked laser;Lu Z.;Opt. Express,2008

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