Compact InP spot‐size converter with vertically tapered core layer formed by micro‐loading effect
Author:
Affiliation:
1. NTT Device Innovation CenterNippon Telegraph and Telephone Corporation3‐1 Morinosato‐WakamiyaAtsugiKanagawa243Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2017.0711
Reference6 articles.
1. Temperature‐ and polarization‐insensitive responsivity of a 1.3‐μm optical transceiver diode with an integrated spot‐size converter;Suzaki Y.;IEEE J. Quantum Electron.,1998
2. Spotsize converter with improved design for InP‐based deep‐ridge waveguide structure;Kohtoku M.;J. Lightwave Technol.,2005
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