Realisation of a widely tuneable sampled grating DBR laser emitting around 970 nm

Author:

Brox O.1,Tawfieq M.1,Della Casa P.1,Ressel P.1,Sumpf B.1,Erbert G.1,Knigge A.1,Weyers M.1,Wenzel H.1

Affiliation:

1. Ferdinand‐Braun‐Institut, Leibniz‐Institut für Höchstfrequenztechnik im Forschungsverbund Berlin e.V.Berlin12489Germany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference6 articles.

1. Semiconductor laser advances;Coldren L.;Photonics Soc. Newsl.,2011

2. Oxygen incorporation, photoluminescence, laser performance of AIGaAs grown by organometallic vapor phase epitaxy;Schwartz B.;J. Electron. Mater.,1995

3. GaAs/AlGaAs‐based 870‐nm‐band widely tunable edge‐emitting V‐cavity laser;Wei W.;Photon. J.,2013

4. Y‐branch coupled DFB‐lasers based on high‐order Bragg gratings for wavelength stabilization;Fricke J.;Semicond. Sci. Technol.,2013

5. Concept and numerical simulations of widely tunable GaAs‐based sampled‐grating diode laser emitting at 976 nm;Tawfieq M.;IET Optoelectron.,2017

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