Low-field tunnelling current in thin-oxide m.n.o.s. memory transistors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19730014?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chapter 5 Multilayer dielectrics for memory applications;New Insulators, Devices and Radiation Effects;1999
2. Charge transport and storage of low programming voltage SONOS/MONOS memory devices;Solid-State Electronics;1990-01
3. Electron tunneling at Al‐SiO2interfaces;Journal of Applied Physics;1981-04
4. THE NATURE OF ELECTRON TUNNELING IN SiO2;The Physics of SiO2 and its Interfaces;1978
5. Charge centroid in MNOS devices;Journal of Applied Physics;1977-07
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