Fabrication and characterisation of field‐effect transistor‐type pressure sensor with metal–oxide–semiconductor/microelectromechanical systems processes-Reference-Cited by-同舟云学术

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Fabrication and characterisation of field‐effect transistor‐type pressure sensor with metal–oxide–semiconductor/microelectromechanical systems processes

Published:2015-10 Issue:10 Volume:10 Page:483-486
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Kim Byung‐Min¹,Kim Bum‐Joon¹,Kim Jung‐Sik¹

Affiliation:

1. Department of Materials Science and EngineeringUniversity of SeoulSeoulRepublic of Korea

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2015.0166

Reference13 articles.

1. MEMS capacitive pressure sensors: a review on recent development and prospective;Eswaran P.;Int. J. Eng. Tech. (IJET),2013

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1. Recent progress in flexible pressure sensors based on multiple microstructures: from design to application;Nanoscale;2023

2. Fabrication and testing of PMOS current mirror-integrated MEMS pressure transducer;Sensor Review;2019-11-23

3. Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET;Advanced Engineering Forum;2018-11

4. A self-aligned high resolution patterning process for large area printed electronics;Journal of Materials Chemistry C;2017

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