Asymmetric lightly doped Schottky barrier CNTFET-Reference-Cited by-同舟云学术

Asymmetric lightly doped Schottky barrier CNTFET

Published:2016-03 Issue:3 Volume:11 Page:169-173
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Ghasemi Nejad Raeini Amin¹,Kordrostami Zoheir²

Affiliation:

1. Gole Gohar mining and Industrial CoSirjanIran

2. Department of Electrical and Electronic EngineeringShiraz University of TechnologyShirazIran

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2015.0434

Reference10 articles.

1. Amin GhasemiN.R.KordrostamiZ.JavaheriM.: ‘High on/off current ratio in SB‐CNTFET based on tuning the gate insulator parameters for different ambient temperatures’.IEEE NEMS 2015

2. PourfathM.UngersboeckE.GehringA.et al.: ‘Optimization of Schottky barrier carbon nanotube field effect transistors’.Microelectronic Engineering 2004 pp.428–433

3. Influence of Channel and Underlap Engineering on the High-Frequency and Switching Performance of CNTFETs

4. WangW.LiN.XiaC.et al.: ‘Quantum simulation study of single halo dual‐material gate CNTFETs’.Solid‐State Electronics 2014 pp.147–151

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