Surface-state density at the (hydrogen-chloride) oxide-silicon interface
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19720293?crawler=true&mimetype=application/pdf
Reference11 articles.
Cited by 34 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On-Chip Optical Power Monitor Using Periodically Interleaved P-N Junctions Integrated on a Silicon Waveguide;IEEE Journal of Selected Topics in Quantum Electronics;2014-07
2. THERMAL OXIDATION OF SILICON AND Si-SiO2 INTERFACE MORPHOLOGY, STRUCTURE AND LOCALIZED STATES;Handbook of Surfaces and Interfaces of Materials;2001
3. Effects of hydrogen chloride on the annealing kinetics of interface and oxide traps in oxidized silicon stressed by avalanche electron injection;Solid-State Electronics;1988-07
4. Effects of hydrogen chloride on boron acceptor hydrogenation and trap generation‐annealing in oxidized silicon irradiated by keV electrons;Journal of Applied Physics;1988-05
5. Effect of hydrogen chloride during oxidation of silicon on trap generation by avalanche electron injection;Journal of Applied Physics;1986-08-15
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