Electron-relaxation effects in transferred-electron devices revealed by new simulation method
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19720265?crawler=true&mimetype=application/pdf
Reference8 articles.
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Electron Velocity Overshoot, Electron Ballistic Transport, and Nonequilibrium Phonon Dynamics in Nanostructure Semiconductors;Ultrafast Phenomena in Semiconductors;2001
3. Field-induced electron transport and phonon dynamics in a GaAs-basedp-i-nnanostructure: A subpicosecond time-resolved Raman probe;Physical Review B;1997-10-15
4. Linear and nonlinear analysis of microwave power generation in submicrometern+nn+InP diodes;Journal of Applied Physics;1994-11
5. A novel approach to a transport model for ultra‐small‐scale compound semiconductor devices;Journal of Applied Physics;1992-10-15
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