Self-aligned complementary GaAs MISFETs using a low-temperature-grown GaAs gate insulator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19960221?crawler=true&mimetype=application/pdf
Reference7 articles.
1. High-power-density GaAs MISFETs with a low-temperature-grown epitaxial layer as the insulator
2. Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
3. Self-aligned GaAs MISFET's with a low-temperature-grown GaAs gate insulator
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Novel extension of neu-MOS techniques to neu-GaAs;Microelectronics Journal;2000-07
2. Semiconductor-Insulator Interfaces;Wiley Encyclopedia of Electrical and Electronics Engineering;1999-12-27
3. Novel extension of neu-MOS techniques to neu-GaAs;SPIE Proceedings;1999-10-08
4. Self-aligned pseudomorphic HEMT with a low-temperature-grown GaAs gate insulator;Electronics Letters;1997
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