Current analysis of polyimide passivated InGaP/GaAs HBT
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_19960567?crawler=true&mimetype=application/pdf
Reference24 articles.
1. 2.0 W CW X-band GaInP/GaAs heterojunction bipolar transistor
2. Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor
3. Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
4. Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
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