Investigation of step-doped channel heterostructure field-effect transistor
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/ip-cds_19971479?crawler=true&mimetype=application/pdf
Reference11 articles.
1. A pseudomorphic AlGaAs/n/sup +/-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
2. Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor
3. Device linearity improvement by Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructure doped-channel FETs
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1. Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis;Scientific Reports;2020-07-27
2. High performances of InGaP∕InGaAs∕GaAs pseudomorphic modulation-doped field effect transistors using camel-gate structure;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. A novel InGaP/InGaAs/GaAs double /spl delta/-doped pHEMT with camel-like gate structure;IEEE Electron Device Letters;2003-01
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