Low dark current 4H-SiC avalanche photodiodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20031059?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Ionization rates and critical fields in 4H silicon carbide
2. 4H-SiC visible blind UV avalanche photodiode
3. Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2° positive bevel
4. Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes
5. Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications
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1. Charge layer optimized 4H-SiC SACM avalanche photodiode with low breakdown voltage and high gain;Japanese Journal of Applied Physics;2019-10-01
2. 4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al Implantation;IEEE Photonics Technology Letters;2016-06-01
3. 4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain;Solid-State Electronics;2009-01
4. Annealing effects on the optical and structural properties of Al2O3/SiO2 films as UV antireflection coatings on 4H-SiC substrates;Applied Surface Science;2008-08
5. High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕SiO2 films;Applied Physics Letters;2008-06-23
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