High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes-Reference-Cited by-同舟云学术

High Power 170 GHz Frequency Doubler Based on GaAs Schottky Diodes

Published:2022-05 Issue:3 Volume:31 Page:547-554
ISSN:1022-4653
Container-title:Chinese Journal of Electronics
language:en
Short-container-title:Chinese J of Electronics

Author:

TIAN Yaoling¹²,HE Yue¹²,HUANG Kun¹²,JIANG Jun¹²,LIN Changxing¹²,ZHANG Jian³

Affiliation:

1. Microsystem and Terahertz Research CenterChina Academy of Engineering PhysicsChengdu610200China

2. Institute of Electronic EngineeringChina Academy of Engineering PhysicsMianyang621900China

3. School of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Applied Mathematics,Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cje.2021.00.248

Reference14 articles.

1. “Real time 3D imaging system based on sparse MIMO array at 340 GHz,”;Zhenmao Cui;Journal of Infrared and Millimeter Waves,2017

2. The Herschel-Heterodyne Instrument for the Far-Infrared (HIFI)

3. “Submillimetre‐wave receiver developments for ICI onboard METOP‐SG and ice cloud remote sensing instruments,”;Thomas Bertrand;International Geoscience and Remote Sensing Symposium (IGARSS),2012

4. “Design of a 166 GHz high power source based on power‐combined technology,”;Jin Meng;Journal of Infrared and Millimeter Waves,2018

5. A 177–183 GHz High-Power GaN-Based Frequency Doubler With Over 200 mW Output Power

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Waveguide Reconfigurable Multiband Terahertz Frequency Doubler Using Choke Flange Technology;IEEE Transactions on Microwave Theory and Techniques;2024-09

2. High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications;Science China Materials;2024-04-25

3. Enhanced hole transport of nonpolar InGaN-based light-emitting diodes with lateral p-type superlattice doping structure;Fundamental Research;2024-04

4. A high efficiency and high power 165–180 GHz balanced doubler based on Schottky diode;Microelectronics Journal;2023-10

5. A Novel Four-Port Configuration With Improved Efficiency and Power-Handling Capability for Diode-Based Doublers in Submillimeter Waves;IEEE Transactions on Microwave Theory and Techniques;2023-08