120‐GHz 2‐bit reflection‐type phase shifter based on PIN diodes switched‐lines

Author:

Ouattara David1,Durand Cédric1,Bourdel Sylvain2,Paillardet Frédéric1,Vincent Loic3,Corsi Jordan2,Ferrari Philippe2

Affiliation:

1. STMicroelectronics Crolles France

2. Université Grenoble Alpes Grenoble INP TIMA Grenoble France

3. Université Grenoble Alpes Grenoble INP CIME‐Nanotech Grenoble France

Abstract

AbstractIn this paper, a 2‐bit digital reflection‐type phase shifter (RTPS) working at 120 GHz is presented. It uses a compact coupled‐lines coupler with low insertion loss and high isolation over a wide bandwidth. The loads are made by a microstrip‐line loaded by three PN jonction separated by an intermediate region I (PIN) diodes whose states are tuned ON/OFF to obtain 90°, 180° and 270° phase shift relative to the reference (0°). Measurement results show root mean square (RMS) phase and amplitude error equal to 10.3° and 1.2 dB, respectively. The maximum insertion loss is equal to 8.6 dB, leading to a figure of merit of 31°/dB. As shown by simulation, by flipping PIN diodes and using negative voltage for biasing, the maximum insertion loss could be reduced to 3.6 dB (figure of merit of 75°/dB) along with a great improvement in RMS phase and amplitude errors, thus showing the potential of the proposed architecture.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference8 articles.

1. 0.1 mm2 SiGe BiCMOS Rx/Tx channel front‐ends for 120 GHz phased array radar systems;Öztürk H.J.N.;Silicon Monolithic Integrated Circuits in RF Systems (SiRF),2017

2. Reconfigurable Circuits and Technologies for Smart Millimeter-Wave Systems

3. Sayginer G.M.R.:A 94‐96 GHz phased‐array receive front‐end with 5‐bit phase control and 5 dB noise figure in 32 nm CMOS SOI. In: IEEE MTT‐S International Microwave Symposium(2017)

4. Margalef Rovira M.:Design of mm‐wave reflection‐type phase shifters with oscillation‐based test capabilities. PhD p 32(2020)

5. Chevalier G.A. Ribes A.M. et al.:A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT /370 GHz fMAX HBT and high‐q millimeter‐wave passives. In: IEEE International Electron Devices Meeting pp.3.9.1–3.9.3(2014)

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