Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application-Reference-Cited by-同舟云学术

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Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Published:2019-10 Issue:12 Volume:14 Page:1274-1277
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Yadav Manoj¹²^ORCID,Velampati Ravi Shankar R.³,Mandal Debaprasad⁴

Affiliation:

1. Department of Electrical EngineeringIndian Institute of Technology RoparPunjab140001India

2. Department of Electronics EngineeringNational Chiao Tung UniversityHsinchu30010Taiwan

3. Semi‐Conductor LaboratoryDepartment of SpaceGovernment of IndiaS.A.S. NagarPunjab160071India

4. Department of ChemistryIndian Institute of TechnologyRoparPunjab140001India

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2019.0148

Reference14 articles.

1. Controlled Heterogeneous Nucleation and Growth of Germanium Quantum Dots on Nanopatterned Silicon Dioxide and Silicon Nitride Substrates

2. Floating Gate Nonvolatile Memory Using Individually Cladded Monodispersed Quantum Dots

3. YeterJ.et al.: ‘Highly optimized nanocrystal‐based split gate flash for high performance and low power microcontroller applications’.3rd IEEE Int. Memory Workshop (IMW) Monterey CA USA May2011

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