Edge injection and pinch-in effect of transistors with cylindrical geometry-Reference-Cited by-同舟云学术

Edge injection and pinch-in effect of transistors with cylindrical geometry

Published:1968 Issue:25 Volume:4 Page:553
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Rein H.-M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19680430?crawler=true&mimetype=application/pdf

Reference9 articles.

1. Rein, H.-M.: ‘Der Eingangswiderstand von Transistoren bei schnellen Schaltvorgängen’, 1968, Dissertation, an der Universität Stuttgart und AEÜ p. 322–336

2. WEITZSCH, F.: ‘Der Einschnüreffekt bei Transistoren, die im Durch-bruchsgebiet betrieben werden’, AEÜ, 1962, pp. 1–8

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