Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside‐Illuminated CMOS Image Sensors-Reference-Cited by-同舟云学术

Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside‐Illuminated CMOS Image Sensors

Published:2021-01 Issue:1 Volume:30 Page:180-184
ISSN:1022-4653
Container-title:Chinese Journal of Electronics
language:en
Short-container-title:Chin. j. electron.

Author:

Bingkai Liu¹²³,Yudong Li¹²,Lin Wen¹²,Dong Zhou¹²,Jie Feng¹²,Xiang Zhang¹²³,Yulong Cai¹²³,Jing Fu¹²³,Qi Guo¹²

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special EnvironmentsXinjiang Technical Institute of Physics and Chemistry, Chinese Academy of SciencesUrumqi830011China

2. Xinjiang Key Laboratory of Electronic Information Material and DeviceUrumqi830011China

3. University of Chinese Academy of SciencesBeijing100049China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Applied Mathematics,Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/cje.2020.12.002

Reference14 articles.

1. S.Iwabuchi Y.Maruyama Y.Ohgishiet al. “A back‐illuminated high‐sensitivity small‐pixel color CMOS image sensor with flexible layout of metal wiring” Proc. of IEEE International Solid‐State Circuits San Francisco California USA 2006.

2. K.Minoglou K.De Munck D.S.Tezcanet al. “Backside illuminated thinned CMOS image sensors for space imaging” Proc. of IEEE Sensors Lecce Italy pp.1429–1432 2008.

3. “Proton effects in charge‐coupled devices”;Hopkinson G.R.;IEEE Transactions on Nuclear Science,1996

4. “Irradiation damage tests on backside‐illuminated CMOS APS prototypes for the extreme ultraviolet imager on‐board solar orbiter”;BenMoussa A.;IEEE Transactions on Nuclear Science,2013

5. “Radiation effects due to 3 MeV proton irradiations on back‐side illuminated CMOS image sensors”;Zhang X.;Chinese Physics Letters,2018

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