Deformation-potential constant for Γ-L transitions in GaSb
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19710429?crawler=true&mimetype=application/pdf
Reference14 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large Signal Monte Carlo Simulation of Electron Transport in GaxIn1-xSb;Japanese Journal of Applied Physics;1980-07
2. Galvanomagnetic effects in n-type gallium antimonide;Journal of Physics and Chemistry of Solids;1978-01
3. Electron Transport Properties of GaxIn1-xSb Calculated by the Monte Carlo Method;Japanese Journal of Applied Physics;1977-08
4. Nernst-Ettingshausen effects and electron scattering in GaSb;Journal of Physics C: Solid State Physics;1974-04-21
5. Parameters of electron transfer in InP;Journal of Applied Physics;1973-06
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