High-frequency performance for sub-0.1 μm gate InAs-inserted-channel InAlAs/InGaAs HEMT
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920776?crawler=true&mimetype=application/pdf
Reference4 articles.
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts;The European Physical Journal B;2023-08
2. Noise Characterization of InAs Based Composite Channel DG -MOSHEMT with Different Gate Dielectrics;Silicon;2021-02-15
3. Microstructure of interfaces in heterosystems;Nanotechnologies in Russia;2013-05
4. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22
5. Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm $g_{m}$ and 500-GHz $f_{T}$;IEEE Transactions on Electron Devices;2007-03
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