High temperature (90°C) CW operation of 646 nm InGaAlP laser containing multiquantum barrier-Reference-Cited by-同舟云学术

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High temperature (90°C) CW operation of 646 nm InGaAlP laser containing multiquantum barrier

Published:1992 Issue:2 Volume:28 Page:150
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Rennie J.,Watanabe M.,Okajima M.,Hatakoshi G.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19920093?crawler=true&mimetype=application/pdf

Reference9 articles.

1. 633 nm CW operation of GaInP/AlGaInP laser-diodes

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1. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes;Journal of Applied Physics;2006-10-15

2. Optical properties tuning of quantum-well lasers and photodiodes through γ-ray irradiation;Radiation Physics and Chemistry;2002-03

3. Optical properties of gamma irradiated visible strained quantum well lasers;Journal of Applied Physics;2002

4. Visible-Wavelength Laser Diodes;Semiconductor Lasers II;1999

5. Photoluminescence investigation of the carrier confining properties of multiquantum barriers;IEEE Journal of Quantum Electronics;1997

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