Side-emitting GaAs/AlGaAs SQW LEDs showing wide spectrum using shadow masked growth
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19920573?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Extending the tuning range of DS-DBR lasers;2008 IEEE 21st International Semiconductor Laser Conference;2008-09
2. MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications;Journal of Crystal Growth;2004-01
3. Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy;IEEE Photonics Technology Letters;1998-09
4. Photonic integrated circuits fabricated using ion implantation;IEEE Journal of Selected Topics in Quantum Electronics;1998
5. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
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