Noise analysis of reflection‐type microwave RTD amplifier
Author:
Affiliation:
1. System IC Development TeamNational Nanofab Centre291, Daehak‐roDaejeon34141Republic of Korea
2. RF Laboratory, H/W Group, R&D TeamNetwork Business, SEC, 129, Samsung‐ro, Yeongtong‐guSuwon‐siGyeonggi‐do16677Republic of Korea
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2020.0078
Reference23 articles.
1. Many‐objective sizing optimization of a class‐C/D VCO for ultralow‐power Iot and ultralow‐phase‐noise cellular applications;Martins R.;IEEE Trans. VLSI Syst.,2019
2. A 0.4-V Low Noise Amplifier Using Forward Body Bias Technology for 5 GHz Application
3. A Fully Integrated 5 GHz Low-Voltage LNA Using Forward Body Bias Technology
4. MMIC applications of heterostructure interband tunnel devices
5. Reflection-Type RTD Low-Power Amplifier With Deep Sub-mW DC Power Consumption
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