In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation-Reference-Cited by-同舟云学术

In‐depth analysis of the static behaviour of a SiC MOSFET and of its associated parameters using both compact modelling and physical simulation

Published:2020-02-12 Issue:2 Volume:14 Page:222-228
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Jouha Wadia¹²,El Oualkadi Ahmed¹,Dherbécourt Pascal²,Masmoudi Mohamed²,Joubert Eric²

Affiliation:

1. Laboratory of Information Technology and CommunicationNational School of Applied Sciences of Tangier, University of Abdelmalek EssaadiTetouanMorocco

2. Normandie University, UNIROUEN, INSA Rouen, CNRS, Groupe de Physique des Matériaux, UMR 6634Avenue de l'université B.P 12Saint Etienne du Rouvray76800France

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.5509

Reference30 articles.

1. Characterization and reliability of SiC- and GaN-based power transistors for renewable energy applications

2. A Survey of Wide Bandgap Power Semiconductor Devices

3. Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems

4. Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications

5. Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Real-Life Mission Profile Oriented Lifetime Estimation of a SiC Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021