Analysing the TIPSP‐based VOFET through transistor efficiency ( g m /I D )-Reference-Cited by-同舟云学术

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Analysing the TIPSP‐based VOFET through transistor efficiency ( g m /I D )

Published:2018-11 Issue:2 Volume:13 Page:139-144
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Agrawal Kalpana¹,Srivastava Ritu²,Rajput S.S.³

Affiliation:

1. Academy of Scientific and Innovative Research (AcSIR)CSIR – National Physical Laboratory, CSIRDr. K.S. Krishnan RoadNew Delhi110 012India

2. Advanced Materials and Devices DivisionCSIR – National Physical Laboratory, CSIRDr. K. S. Krishnan RoadNew Delhi110 012India

3. CSIR – National Physical LaboratoryCSIRDr. K. S. Krishnan RoadNew Delhi110 012India

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.5173

Reference32 articles.

1. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

2. The Mechanism of Operation of Lateral and Vertical Organic Field Effect Transistors

3. Electron and Ambipolar Transport in Organic Field-Effect Transistors

4. Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

5. Unique architecture and concept for high-performance organic transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulation of Interchain Packing Orientation by Varying a Branch Point of Alkyl Substituent: Molecular Dynamics Simulation and Electrical Properties;ACS Applied Polymer Materials;2024-07-01

2. Perovskite Resonant Tunneling FET with Sequential Negative Differential Resistance Peaks;ACS Applied Electronic Materials;2019-04-23

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