Symptom reliability: S‐parameters evaluation of power laterally diffused‐metal–oxide–semiconductor field‐effect transistor after pulsed‐RF life tests for a radar application-Reference-Cited by-同舟云学术

Symptom reliability: S‐parameters evaluation of power laterally diffused‐metal–oxide–semiconductor field‐effect transistor after pulsed‐RF life tests for a radar application

Published:2018-03-29 Issue:5 Volume:12 Page:571-578
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Belaïd Mohamed Ali¹²

Affiliation:

1. LATIS – Laboratory of Advanced Technology and Intelligent SystemsENISo4023 Sousse UniversityTunisia

2. GPM‐UMR CNRS 6634, University of Rouen76801Saint Etienne du RouvrayFrance

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.0005

Reference23 articles.

1. Performance drifts of N-MOSFETs under pulsed RF life test

2. A High-Temperature Gate Driver for Silicon Carbide mosfet

3. Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors

4. Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From $S$ -Parameters

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1. Performance Evaluation Study of MOSFET Devices After S-band Pulsed-RF Accelerated Tests;2021 International Conference on Engineering and Emerging Technologies (ICEET);2021-10-27

2. Thermal effect on performance of N-MOSFET transistor under pulsed RF tests;2021 27th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2021-09-23

3. RF performance reliability of power N‐LDMOS under pulsed‐RF aging life test in radar application S‐band;IET Circuits, Devices & Systems;2020-08-31

4. Study of reliability degradation in power RF LDMOS under pulsed life test due to impact ionization;2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2020-07-20

5. Temperature impact on reliability of power RF devices under S-band pulsed-RF test;SN Applied Sciences;2020-04-20