DC modelling of SOI four‐gate transistor (G 4 FET) for implementation in circuit simulator using multivariate regression polynomial-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

DC modelling of SOI four‐gate transistor (G 4 FET) for implementation in circuit simulator using multivariate regression polynomial

Published:2018-06-26 Issue:1 Volume:13 Page:12-20
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Hasan Md Sakib¹,Islam Syed K.²

Affiliation:

1. Department of Electrical Engineering and Computer ScienceThe University of Tennessee343 Min Kao Building, 1520 Middle DriveKnoxvilleTN37996‐2250USA

2. Department of Electrical Engineering and Computer ScienceThe University of Tennessee504 Min Kao Building, 1520 Middle DriveKnoxvilleTN37996‐2250USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2018.0059

Reference26 articles.

1. THE MULTIPLE-GATE MOS-JFET TRANSISTOR

2. The Four-Gate Transistor

3. Silicon-on-Insulator Technology: Materials to VLSI

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling Emerging Semiconductor Devices for Circuit Simulation;Computational Models in Engineering;2020-03-11

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP