Three‐state quantum dot gate field‐effect transistor in silicon‐on‐insulator-Reference-Cited by-同舟云学术

Three‐state quantum dot gate field‐effect transistor in silicon‐on‐insulator

Published:2015-03 Issue:2 Volume:9 Page:111-118
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Karmakar Supriya¹,Gogna Mukesh²,Suarez Ernesto³,Jain Faquir C.⁴

Affiliation:

1. Intel CorporationHillsboroOR97124USA

2. Global FoundriesMaltaNY12020USA

3. University of HartfordWest HartfordCT06117USA

4. University of ConnecticutStorrsCT06269USA

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2014.0202

Reference33 articles.

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2. MOSFET modeling for analog circuit CAD: problems and prospects

3. Silicon-on-Insulator Technology: Materials to VLSI

4. High-κ gate dielectrics: Current status and materials properties considerations

5. Wilk G.D. Green M.L. Ho M.‐Y. et al.: ‘Improved film growth and flatband voltage control of ALD HfO2 and Hf‐Al‐O with n+ poly‐Si gates using chemical oxides and optimized post‐annealing’.Symp. VLI Technology Digest of Technical Papers 2002 pp.88–99

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