Second‐order non‐quasi‐static, compact model of field‐effect transistor revealing terminal rectification beyond their cutoff frequency
Author:
Affiliation:
1. École Polytechnique Fédérale de Lausanne (EPFL)LausanneSwitzerland
2. Department of Engineering Mathematics and Physics, Faculty of EngineeringCairo UniversityGiza12613Egypt
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering,Control and Systems Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2019.0127
Reference24 articles.
1. Ground plane fin-shaped field effect transistor (GP-FinFET): A FinFET for low leakage power circuits
2. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications
3. Tunnel field-effect transistor without gate-drain overlap
4. A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region
5. A unified MOSFET channel charge model for device modeling in circuit simulation
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1. Modeling and simulation of short channel length effect in open drain MOSFET THz detectors;Journal of Engineering and Applied Science;2023-05-05
2. Second-Order Rectification of High-Frequency Radiation in Bipolar Junction Transistor;Recent Advances in Engineering Mathematics and Physics;2020
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