IL analysis for 8‐way power combining network in 77–110 GHz 40 nm‐complementary metal–oxide–semiconductor PA design-Reference-Cited by-同舟云学术

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IL analysis for 8‐way power combining network in 77–110 GHz 40 nm‐complementary metal–oxide–semiconductor PA design

Published:2019-11 Issue:8 Volume:13 Page:1181-1186
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Huang Ching‐Ying¹^ORCID,Wu Pin‐Hsuan¹,Wu Kun‐Long¹,Hu Robert¹,Chang Chi‐Yang¹

Affiliation:

1. School of Electrical EngineeringNational Chiao‐Tung University1001 University Rd.HsinchuPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2019.0074

Reference10 articles.

1. A review of recent power amplifier IC

2. Broadband W-band power amplifier using 40 nm bulk CMOS

3. An E-Band Power Amplifier With Broadband Parallel-Series Power Combiner in 40-nm CMOS

4. Transformer-Based Doherty Power Amplifiers for mm-Wave Applications in 40-nm CMOS

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