Active layers for device applications by using high-energy selenium implantation into GaAs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19770169?crawler=true&mimetype=application/pdf
Reference7 articles.
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Commissioning and application of the university of surrey 2MV (HVE) heavy ion accelerator;Radiation Effects and Defects in Solids;1994-01
2. High energy implantation at the University of Surrey;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1991-05
3. Process Modeling of n‐Type Doping in Gallium Arsenide;Journal of The Electrochemical Society;1984-12-01
4. Dependence of implanted Se and S profiles on GaAs implantation temperature and crystallinity;Applied Physics Letters;1981-11
5. Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication;IEE Proceedings I Solid State and Electron Devices;1981
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