Interface-recombination-controlled minority-carrier lifetime in n-type gap
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19770011?crawler=true&mimetype=application/pdf
Reference4 articles.
1. Shockley, W.: Electrons and holes in semiconductors, (D. Van Nostrand, New York 1950),chap. 12, p. 323
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1. Generation-recombination processes and Auger suppression in small-bandgap detectors;Journal of Crystal Growth;1988-01
2. Experimental Investigations on the Influence of Surface and Interface Recombination on the Minority Carrier Lifetime in LPE-GaP :N, Si VPE-GaP:N, Te, and VPE-GaAs0.12P0.88:N, Te;physica status solidi (a);1986-08-16
3. Drift mobility, electron trapping, and diffusion‐limited kinetics in sulfur‐sensitized AgBr microcrystals;Journal of Applied Physics;1985-04-15
4. Minority carrier lifetime in GaP grown by liquid phase epitaxy for high temperature applications;Journal of Applied Physics;1982-05
5. Diffusion lengths in p-type MOCVD GaAs;Journal of Crystal Growth;1981-10
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