X‐parameter‐based modelling of polar modulated power amplifiers-Reference-Cited by-同舟云学术

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X‐parameter‐based modelling of polar modulated power amplifiers

Published:2013-11 Issue:14 Volume:7 Page:1161-1167
ISSN:1751-8733
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Wang Yelin¹,Nielsen Troels Studsgaard²,Sira Daniel¹,Jensen Ole Kiel¹,Larsen Torben¹

Affiliation:

1. Department of Electronic SystemsAalborg UniversityAalborgDenmark

2. Agilent Technologies BelgiumRotselaarBelgium

Funder

Højteknologifonden

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2012.0523

Reference25 articles.

1. A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE

2. A 1.9-GHz Triple-Mode Class-E Power Amplifier for a Polar Transmitter

3. An Efficient Mixed-Signal 2.4-GHz Polar Power Amplifier in 65-nm CMOS Technology

4. A Fully Integrated Adaptive Multiband Multimode Switching-Mode CMOS Power Amplifier

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1. MOF@Polydopamine-incorporated membrane with high permeability and mechanical property for efficient fouling-resistant and oil/water separation;Environmental Research;2023-11

2. Design of a Compact GaN MMIC Doherty Power Amplifier and System Level Analysis With X-Parameters for 5G Communications;IEEE Transactions on Microwave Theory and Techniques;2018-12

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