Robustness‐oriented P‐band phased array radar front‐end with high phase and gain resolution in 0.18 BiCMOS
Author:
Affiliation:
1. College of Information Science and Electronic EngineeringZhejiang UniversityHangzhou310027People's Republic of China
2. Singapore University of Technology & Design8 Somapah RoadSingapore487372Singapore
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2019.0792
Reference27 articles.
1. Sadhu B. Tousi Y. Hallin J. et al.: ‘7.2 A 28 GHz 32‐element phased‐array transceiver IC with concurrent dual polarized beams and 1.4 degree beam‐steering resolution for 5G communication’.2017 IEEE Int. Solid‐State Circuits Conf. (ISSCC) San Francisco USA. 2017 pp.128–129
2. A 28-GHz CMOS Direct Conversion Transceiver With Packaged $2 \times 4$ Antenna Array for 5G Cellular System
3. A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and −30-dBc EVM With 64-QAM/500-MBaud Modulation
4. A Ka-Band Single-Chip SiGe BiCMOS Phased-Array Transmit/Receive Front-End
5. Cao R. Li Z. Tao X. et al.: ‘A compact X‐band four‐channel SiGe BiCMOS T/R chipset for digital array radar applications’.IEEE MTT‐S Int. Microwave Symp. Digest Hawaii USA. 2017 pp.1979–1982
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1. A X-band Power Amplifier with Temperature Tolerance in 0.18-µm SiGe BiCMOS;2022 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2022-08-12
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