Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology-Reference-Cited by-同舟云学术

Analysis and design of a Q/V‐band low‐noise amplifier in GaAs‐based 0.1 µm pHEMT technology

Published:2016-11 Issue:14 Volume:10 Page:1500-1506
ISSN:1751-8733
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Pantoli Leonardo¹,Barigelli Alessandro²,Leuzzi Giorgio¹,Vitulli Francesco²

Affiliation:

1. Department of Industrial and Information Engineering and EconomicUniversity of L'AquilaPiazzale Ernesto PontieriMonteluco di RoioL'AquilaItaly

2. Thales Alenia Space – Italia S.p.a.Via Saccomuro, 2400131RomaItaly

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2016.0422

Reference21 articles.

1. Aloisio M. Angeletti P. Coromina F. et al.: ‘Exploitation of Q/V‐band for future broadband telecommunication satellites’.IEEE Thirteenth Int. Vacuum Electronics Conf. (IVEC) Monterey CA 24–26 April2012 pp.351–352

2. Apollonio D. Arena S. Biondi A. et al.: ‘QV band receiver converter for satellite communications’.IEEE 11th European Radar Conf. (EuRAD) Rome IT 8–10 October2014 pp.360–363

3. Pantoli L. Leuzzi G. Barigelli A. et al.: ‘An ultra wideband LNA module for space applications’.IEEE 10th European Microwave Integrated Circuits Conf. (EuMIC) Paris FRA 7–8 September2015 pp.160–163

4. Ho P.‐H. Chiong C.‐C. Wang H.: ‘An ultra low‐power Q‐band LNA with 50% bandwidth in WIN GaAs 0.1‐μm pHEMT process’.Asia‐Pacific Microwave Conf. (APMC) Seoul South Korea 5–9 November2013 pp.713–715

5. Tran L. Isobe R. Delaney M. et al.: ‘High performance high yield millimeter‐wave MMIC LNAs using InP HEMTs’.IEEE Microwave and Millimeter‐Wave Monolithic Circuits Symp. San Francisco CA USA 16–18 June1996 pp.133–136

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