DC∼10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/iet-map.2011.0231?crawler=true&mimetype=application/pdf
Reference15 articles.
1. A micromachined CMOS distributed amplifier by CMOS compatible ICP deep-trench technology
2. Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems
3. A Low-Noise CMOS Distributed Amplifier for Ultra-Wide-Band Applications
4. 60-GHz SOI CMOS traveling-wave amplifier with NF below 3.8 dB from 0.1 to 40 GHz
5. Low-power-consumption and high-gain CMOS distributed amplifiers using cascade of inductively coupled common-source gain cells for UWB systems
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