Noise analysis in distributed amplifiers with feedback‐active load
Author:
Affiliation:
1. Department of Communication EngineeringUniversity of CantabriaPlaza de la Ciencia s/nSantander39005Spain
2. Electronics Engineering DepartmentUniversity of Roma ‘Tor Vergata’Via del Politecnico1–00133RomaItaly
Funder
Secretaría de Estado de Investigación, Desarrollo e Innovación
Family Process Institute
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2016.0106
Reference13 articles.
1. The Intrinsic Noise Figure of the MESFET Distributed Amplifier
2. On Noise in Distributed Amplifiers at Microwave Frequencies
3. A low‐noise CMOS distributed amplifier for ultra‐wide‐band applications;Moez K.;IEEE Trans. Circuits Syst.,2008
4. Low-noise distributed amplifier with active load
5. Kobayashi K.W. Denninghoff D. Miller D.: ‘A Novel 100 MHz‐45 GHz GaN HEMT low noise non‐gate‐terminated distributed amplifier based on a 6‐Inch 0.15 µm GaN‐SiC mm‐wave process technology’.Compound Semiconductor Integrated Circuit Symp. (CSICS) 2015 pp.1–4
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1. Baseband to 140-GHz SiGe HBT and 100-GHz InP DHBT Broadband Triple-Stacked Distributed Amplifiers With Active Bias Terminations;IEEE Journal of Solid-State Circuits;2020-09
2. Design of a high‐gain silicon BJT and an E‐pHEMT hybrid matrix amplifier with an optimum filter‐matching technique;IET Microwaves, Antennas & Propagation;2019-07-05
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