Simulation study for the use of transistor contacts for sub‐terahertz radiation detection-Reference-Cited by-同舟云学术

Simulation study for the use of transistor contacts for sub‐terahertz radiation detection

Published:2016-05 Issue:7 Volume:10 Page:784-790
ISSN:1751-8733
Container-title:IET Microwaves, Antennas & Propagation
language:en
Short-container-title:IET Microwaves, Antennas & Propagation

Author:

Ibrahim Nihal¹^ORCID,Rafat Nadia H.¹,El‐Din Elnahwy Salah¹

Affiliation:

1. Department of Engineering Mathematics and Physics, Faculty of EngineeringCairo UniversityGiza12613Egypt

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2015.0492

Reference14 articles.

1. Knap W. Nadar S. Videlier H. et al.: ‘Field effect transistors for fast terahertz detection and imaging’.Eighteenth Int. Conf. on Microwave Radar and Wireless Communications (MIKON) 2010 Vilnius Lithuania 2010 pp.1–3

2. Detection of terahertz radiation in gated two-dimensional structures governed by dc current

3. Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power

4. Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

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2. Simulation Study of Terahertz Radiation Coupling Inside Field Effect Transistors;Recent Advances in Engineering Mathematics and Physics;2020